Datasheet

STW26NM60N
Electrical ratings
DocID025246 Rev 2
3/12
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DS
Drain-source voltage
600
V
V
GS
Gate-source voltage
±30
V
I
D
Drain current (continuous) at T
C
= 25 °C
20
A
I
D
Drain current (continuous) at T
C
= 100 °C
12.6
A
I
DM
(1)
Drain current (pulsed)
80
A
P
TOT
Total dissipation at T
C
= 25 °C
140
W
dv/dt
(2)
Peak diode recovery voltage slope
15
V/ns
T
stg
Storage temperature range
-55 to 150
°C
T
j
Operating junction temperature range
Notes:
(1)
Pulse width limited by safe operating area.
(2)
I
SD
≤ 20 A, di/dt ≤ 400 A/µs, V
DS(peak)
≤ V
(BR)DSS,
V
DD
≤ 80% V
(BR)DSS
Table 3: Thermal data
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case
0.89
°C/W
R
thj-amb
Thermal resistance junction-ambient
50
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
I
AS
Single pulse avalanche current (pulse width limited by
T
jmax
)
6
A
E
AS
Single pulse avalanche energy (starting T
J
=25 °C, I
D
=I
AS
,
V
DD
=50 V)
610
mJ