Datasheet

ManualsBrandsST ManualsDiscrete SemiconductorsMOSFET, N-Channel, 600V, 20A, 140W, TO-247

December 2016

DocID025246 Rev 2

1/12

This is information on a product in full production.

www.st.com

STW26NM60N

N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II

Power MOSFET in a TO-247 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

DS(on)

max

STW26NM60N

600 V

0.165 Ω

20 A

 100% avalanche tested

 Low input capacitance and gate charge

 Low gate input resistance

Applications

 Switching applications

Description

This device is an N-channel Power MOSFET

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

Table 1: Device summary

Order code

Marking

Package

Packaging

STW26NM60N

26NM60N

TO-247

Tube

TO-247

AM01475v1_noTab_noZen

D(2)

G(1)

S(3)

Summary of content (12 pages)

PAGE 1
STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in a TO-247 package Datasheet - production data Features    3 2 1 Order code VDS RDS(on) max ID STW26NM60N 600 V 0.165 Ω 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications  TO-247 Switching applications Description Figure 1: Internal schematic diagram D(2) This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.
PAGE 2
Contents STW26NM60N Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information .....................................................
PAGE 3
STW26NM60N 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 20 A ID Drain current (continuous) at TC = 100 °C 12.6 A Drain current (pulsed) 80 A Total dissipation at TC = 25 °C 140 W Peak diode recovery voltage slope 15 V/ns -55 to 150 °C Value Unit 0.
PAGE 4
Electrical characteristics 2 STW26NM60N Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5: On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 V Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 VGS = 0 V, VDS = 600 V, TC= 125 °C (1) 100 Gate-body leakage current VDS = 0 V, VGS = ±25 V ±0.
PAGE 5
STW26NM60N Electrical characteristics Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 20 A ISDM(1) Source-drain current (pulsed) - 80 A VSD(2) Forward on voltage ISD = 20 A, VGS = 0 V - 1.5 V trr Reverse recovery time - 370 ns Qrr Reverse recovery charge - 5.
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Electrical characteristics 2.
PAGE 7
STW26NM60N Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Source-drain diode forward characteristics Figure 12: Normalized V(BR)DSS vs temperature DocID025246 Rev 2 7/12
PAGE 8
Test circuits 3 8/12 STW26NM60N Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform DocID025246 Rev 2
PAGE 9
STW26NM60N 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.
PAGE 10
Package information STW26NM60N Table 9: TO-247 package mechanical data mm Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 10/12 Typ. 5.45 5.60 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID025246 Rev 2 3.65 5.50 5.50 5.
PAGE 11
STW26NM60N 5 Revision history Revision history Table 10: Document revision history Date Revision 07-Jul-2016 1 First release. 2 Modified Table 6: "Dynamic" and Table 8: "Source-drain diode" Modified Section 2.
PAGE 12
STW26NM60N IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.