Datasheet

STP10NK80Z, STP10NK80ZFP, STW10NK80Z Electrical characteristics
Doc ID 8911 Rev 7 5/17
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
=400 V, I
D
=4.5A,
R
G
=4.7Ω, V
GS
=10V
See Figure 21
30
20
ns
ns
t
d(off)
t
f
Turn-off delay Time
Fall time
V
DD
=400 V, I
D
=4.5A,
R
G
=4.7Ω, V
GS
=10V
See Figure 21
65
17
ns
ns
Table 8. Gate-source zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BV
GSO
(1)
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown voltage
Igs=±1mA
(open drain)
30V
Table 9. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current - 9 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 36A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
=9A, V
GS
=0
-1.6V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=9A,
di/dt = 100A/µs,
V
DD
=45V, Tj=150°C
-
645
6.4
20
ns
µC
A
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