Datasheet

Electrical characteristics STP10NK80Z, STP10NK80ZFP, STW10NK80Z
4/17 Doc ID 8911 Rev 7
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1mA, V
GS
= 0
800 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 800V
V
DS
= 800V, T
C
= 125°C
1
50
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
±10 µA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100µA
33.75 4.5 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 4.5A
0.78 0.9 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
V
DS
=15V, I
D
= 4.5A
-9.6- S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
-
2180
205
38
-
pF
pF
pF
C
oss eq
(2)
.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
inceases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
=0, V
DS
=0V to 640V
-105- pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=640V, I
D
= 9A
V
GS
=10V
See Figure 20
-
72
12.5
37
-
nC
nC
nC
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