Datasheet

STP10NK80Z, STP10NK80ZFP, STW10NK80Z Electrical ratings
Doc ID 8911 Rev 7 3/17
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220/ TO-247 TO-220FP
V
DSS
Drain-source voltage (V
GS
= 0) 800 V
V
DGR
Drain-gate voltage (R
GS
= 20kΩ)800V
V
GS
Gate-source voltage ± 30V
I
D
Drain current (continuous) at T
C
= 25°C 9
9
(1)
1. Limited by maximum junction temperature.
A
I
D
Drain current (continuous) at T
C
=100°C 6
6
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 36
36
(1)
A
P
TOT
Total dissipation at T
C
= 25°C 160 40 W
Derating factor 1.28 0.32W/°C
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) 4kV
dv/dt
(3)
3.I
SD
≤ 9 A, di/dt ≤ 200 A/µs,V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX
Peak diode recovery voltage slope 4.5 V/ns
V
ISO
Insulation withstand voltage (DC) -- 2500 V
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220 TO-220FP TO-247
R
thj-case
Thermal resistance junction-case Max 0.78 3.1 0.78 °C/W
R
thj-a
Thermal resistance junction-ambient Max 62.5 50 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
9A
E
AS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
290 mJ
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