Datasheet

Characteristics STTH6110TV
2/8
1 Characteristics
When the diodes are used simultaneously:
∆T
j(diode1)
= P
(diode1)
x R
th(j-c)
(per diode) + P
(diode2)
x R
th(c)
To evaluate the conduction losses use the following equation:
P = 1.3 x I
F(AV)
+ 0.013 I
F
2
(RMS)
Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 1000 V
I
F(RMS)
RMS forward current 60 A
I
F(AV)
Average forward current, δ = 0.5 Per diode T
c
= 60° C 30 A
I
FRM
Repetitive peak forward current t
p
= 5 µs, F = 5 kHz square 350 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 240 A
T
stg
Storage temperature range -65 to + 150 °C
T
j
Maximum operating junction temperature 150 °C
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode 1.4
° C/WTotal 0.75
R
th(c)
Coupling thermal resistance 0.1
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
15
µA
T
j
= 125° C 10 100
V
F
(2)
Forward voltage drop
T
j
= 25° C
I
F
= 30 A
2.0
VT
j
= 100° C 1.4 1.8
T
j
= 150° C 1.3 1.7
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %