Datasheet

25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Tj(°C)
IRM
S factor
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125°C).
0 50 100 150 200 250 300 350 400 450 500
0
2
4
6
8
10
VFP(V)
IF=IF(av)
Tj=125°C
dIF/dt(A/µs)
Fig. 8: Transient peak forward voltage versus
dI
F
/dt (90% confidence, per diode).
0 50 100 150 200 250 300 350 400 450 500
0
100
200
300
400
500
tfr(ns)
IF=IF(av)
VFR=1.1*VFmax
Tj=125°C
dIF/dt(A/µs)
Fig. 9: Forward recovery time versus dI
F
/dt (90%
confidence, per diode).
0 50 100 150 200 250 300 350 400 450 500
0.0
0.1
0.2
0.3
0.4
0.5
0.6
S factor
VR=200V
Tj=125°C
dIF/dt(A/µs)
Fig. 6: Softness factor (tb/ta) versus dI
F
/dt (typical
values, per diode).
STTH6003TV/CW
4/6