Datasheet

Characteristics STTH6002C
2/9
1 Characteristics
When the two diodes 1 and 2 are used simultaneously:
∆Tj(diode 1) = P (diode 1) X R
th(j-c)
(Per diode) + P (diode 2) x R
th(c)
Table 1. Absolute ratings (limiting values at T
j
= 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
F(RMS)
RMS forward current 50 A
I
F(AV)
Average forward current, δ = 0.5
TO-247
Per diode T
c
= 140° C
30
A
Per device T
c
= 125° C
60
TOP3I
Per diode T
c
= 120° C
30
Per device T
c
= 105° C
60
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 330 A
T
stg
Storage temperature range -65 to +175 ° C
T
j
Maximum operating junction temperature 175 ° C
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-247
Per diode 1.2
° C/W
Total 0.8
TOP3I
Per diode 1.8
Total 1.20
R
th(c)
Coupling
TO-247 0.4
TOP3I 0.6