Datasheet

Characteristics STTH3R04
4/10
Figure 5. Relative variation of thermal
impedance junction to ambient
versus pulse duration, SMB (epoxy
FR4, copper thickness = 35 µm)
Figure 6. Relative variation of thermal
impedance junction to ambient
versus pulse duration, SMC
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-a)
/R
th(j-a)
Single pulse
SMB
S
Cu
=1cm²
t
P
(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-a)
/R
th(j-a)
Single pulse
SMC
S
Cu
=1cm²
t
P
(s)
Figure 7. Junction capacitance versus
reverse voltage applied
(typical values)
Figure 8. Reverse recovery charges versus
dI
F
/dt (typical values)
1
10
100
1 10 100 1000
C(pF)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
V
R
(V)
0
10
20
30
40
50
60
70
80
90
100
10 100 1000
Q
RR
(nC)
I
F
= 3 A
V
R
=320 V
T
j
=125 °C
T
j
=25 °C
dI
F
/dt(A/µs)
Figure 9. Reverse recovery time versus
dI
F
/dt (typical values)
Figure 10. Peak reverse recovery current
versus dI
F
/dt (typical values)
0
10
20
30
40
50
60
70
80
90
100
10 100 1000
t
RR
(ns)
I
F
= 3 A
V
R
=320 V
T
j
=125 °C
T
j
=25 °C
dI
F
/dt(A/µs)
0
1
2
3
4
5
6
7
8
10 100 1000
I
RM
(A)
I
F
= 3 A
V
R
=320 V
T
j
=125 °C
T
j
=25 °C
dI
F
/dt(A/µs)