Datasheet

Characteristics STTH3R02
4/9
Figure 5. Relative variation of thermal
impedance junction to ambient
versus pulse duration - DO-15
(Epoxy printed circuit board FR4,
e
CU
=35µm)
Figure 6. Relative variation of thermal
impedance junction to ambient
versus pulse duration - SMC
(Epoxy printed circuit board FR4,
e
CU
=35µm)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-a)
/R
th(j-a)
Single pulse
DO-15
L
leads
=10mm
t
P
(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-a)
/R
th(j-a)
Single pulse
SMC
S
cu
=1cm²
t
P
(s)
Figure 7. Junction capacitance versus
reverse applied voltage (typical
values)
Figure 8. Reverse recovery charges versus
dI
F
/dt (typical values)
1
10
100
1 10 100 1000
C(pF)
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
V
R
(V)
0
10
20
30
40
50
60
70
80
10 100 1000
Q
RR
(n
C
)
I
F
=3A
V
R
=160V
T
j
=125°C
T
j
=25°C
dI
F
/dt(A/µs)
Figure 9. Reverse recovery time versus dI
F
/dt
(typical values)
Figure 10. Peak reverse recovery current
versus dI
F
/dt (typical values)
0
10
20
30
40
50
60
10 100 1000
t
RR
(ns)
I
F
=3A
V
R
=160V
T
j
=125°C
T
j
=25°C
dI
F
/dt(A/µs)
0
1
2
3
4
5
6
7
8
10 100 1000
I
RM
(A)
I
F
=3A
V
R
=160V
T
j
=125°C
T
j
=25°C
dI
F
/dt(A/µs)