Datasheet

STTH3R02 Characteristics
3/9
Table 4. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25° C
24 30
ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25° C
16 20
I
RM
Reverse recovery current
I
F
= 3 A, dI
F
/dt = -200 A/µs,
V
R
= 160 V, T
j
= 125° C
3.5 4.5 A
t
fr
Forward recovery time
I
F
= 3 A, dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
40 ns
V
FP
Forward recovery voltage
I
F
= 3 A, dI
F
/dt = 100 A/µs,
T
j
= 25° C
1.9 V
Figure 1. peak current versus duty cycle Figure 2. Forward voltage drop versus
forward current (typical values)
0
20
40
60
80
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I
M
(A)
T
d
=tp/T
tp
I
M
T
δ
=tp/T
tp
I
M
P = 5 WP = 5 W
P = 3 WP = 3 W
P = 10 WP = 10 W
δ
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0
I
FM
(A)
T
j
=25°C
T
j
=150°C
V
FM
(V)
Figure 3. Forward voltage drop versus
forward current (maximum values)
Figure 4. Relative variation of thermal
impedance junction to ambient
versus pulse duration - DO-201AD
(Epoxy printed circuit board FR4,
e
CU
=35µm)
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0
I
FM
(A)
T
j
=25°C
T
j
=150°C
V
FM
(V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-a)
/R
th(j-a)
Single pulse
DO-201AD
L
leads
=10mm
t
P
(s)