Datasheet

STTH3010 Characteristics
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Table 4. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25° C
100
ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25° C
53 70
I
F
= 1 A, dI
F
/dt = -200 A/µs,
V
R
= 30 V, T
j
= 25° C
42 55
I
RM
Reverse recovery current
I
F
= 30 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125° C
24 32 A
S Softness factor
I
F
= 30 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125° C
1
t
fr
Forward recovery time
I
F
= 30 A dI
F
/dt = 100 A/µs
V
FR
= 1.5 x V
Fmax
, T
j
= 25° C
450 ns
V
FP
Forward recovery voltage
I
F
= 30 A, dI
F
/dt = 100 A/µs,
T
j
= 25° C
5V
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
P(W)
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
0 5 10 15 20 25 30 35 40
=0.05
=0.1
=0.2
=0.5
=1
T
I(A)
F(AV)
I(A)
FM
0
20
40
60
80
100
120
140
160
180
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
T
j
=25°C
(Maximum values)
T
j
=150°C
(Maximum values)
T
j
=150°C
(Typical values)
V (V)
FM
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Peak reverse recovery current
versus dI
F
/dt (typical values)
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Single pulse
t (s)
p
I (A)
RM
0
10
20
30
40
50
60
0 50 100 150 200 250 300 350 400 450 500
V
R
=600V
T
j
=125°C
I
F
= 2 x I
F(AV)
I
F
= I
F(AV)
I
F
=0.5 x I
F(AV)
dI /dt(A/µs)
F