Datasheet

STTH20004TV1 Characteristics
Doc ID 11819 Rev 2 5/8
Figure 7. Reverse recovery time versus dI
F
/dt
(typical values, per diode)
Figure 8. Relative variations of dynamic
parameters versus junction
temperature
Figure 9. Transient peak forward voltage
versus dI
F
/dt (typical values, per
diode)
Figure 10. Forward recovery time versus dI
F
/dt
(typical values, per diode)
Figure 11. Reverse recovery time versus dI
F
/dt (typical values, per diode)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 50 100 150 200 250 300 350 400 450 500
S
FACTOR
I
F
< 2 x I
F(AV)
V
R
=200V
T
j
=125°C
dI
F
/dt(A/µs)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25 50 75 100 125
I
RM
S
FACTOR
I
F
=I
F(AV)
V
R
=200V
Reference: T
j
=125°C
Q
RR
t
RR
T
j
(°C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0 50 100 150 200 250 300 350 400 450 500
V
FP
(V)
I
F
=I
F(AV)
T
j
=125°C
dI
F
/dt(A/µs)
0
200
400
600
800
1000
1200
1400
1600
1800
0 50 100 150 200 250 300 350 400 450 500
t
fr
(ns)
I
F
=I
F(AV)
V
FR
=1.1 x V
F
max.
T
j
=125°C
dI
F
/dt(A/µs)
100
1000
10000
1 10 100 1000
C(pF)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
V
R
(V)