Datasheet

Characteristics STTH20004TV1
4/8 Doc ID 11819 Rev 2
Figure 1. Conduction losses versus average
forward current (per diode)
Figure 2. Forward voltage drop versus
forward current (per diode)
0
20
40
60
80
100
120
140
160
180
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
P(W )
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1
T
δ
=tp/T
tp
I
F(AV)
(A)
0
20
40
60
80
100
120
140
160
180
200
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
I
FM
(A)
T
j
=25°C
(Maximum values)
T
j
=150°C
(Maximum values)
T
j
=150°C
(Maximum values)
T
j
=150°C
(Typical values)
T
j
=150°C
(Typical values)
V
FM
(V)
I
Figure 3. Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 4. Peak reverse recovery current
versus dI
F
/dt (typical values, per
diode)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z
th(j-c)
/R
th(j-c)
Single pulse
t
P
(s)
0
5
10
15
20
25
30
35
40
45
50
0 50 100 150 200 250 300 350 400 450 500
I
RM
(A)
I
F
=I
F(AV)
V
R
=200V
T
j
=125°C
dI
F
/dt(A/µs)
Figure 5. Reverse recovery time versus dI
F
/dt
(typical values, per diode)
Figure 6. Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
0
50
100
150
200
250
300
0 50 100 150 200 250 300 350 400 450 500
t
rr
(ns)
I
F
=I
F(AV)
V
R
=200V
T
j
=125°C
dI
F
/dt(A/µs)
0
500
1000
1500
2000
2500
3000
3500
0 50 100 150 200 250 300 350 400 450 500
Q
(nC)
I
F
=I
F(AV)
V
R
=200V
T
j
=125°C
dI
F
/dt(A/µs)
rr