Datasheet

Characteristics STTH20004TV1
2/8 Doc ID 11819 Rev 2
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
Δ T
j (diode1)
= P
(diode1)
x R
th(j-c) (per diode)
+ P
(diode2)
x R
th(c)
To evaluate the maximum conduction losses use the following equation:
P = 0.8 x I
F(AV)
+ 0.002 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 400 V
I
F(RMS)
Forward rms current 200 A
I
F(AV)
Average forward current, δ = 0.5
T
c
= 90 °C Per diode 100
A
T
c
= 73 °C Per diode 120
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 900 A
T
stg
Storage temperature range -55 to + 150 °C
T
j
Maximum operating junction temperature 150 °C
Table 3. Thermal parameter
Symbol Parameter Maximum Unit
R
th(j-c)
Junction to case
Per diode 0.50
°C/WTot a l 0 . 3 0
R
th(c)
Coupling 0.10
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
100
µA
T
j
= 125 °C 100 1000
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 100 A
1.2
V
T
j
= 150 °C 0.83 1.0
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %