Datasheet

Characteristics STTH20003TV
4/7
Figure 7. Relative variations of dynamic
parameters versus junction
temperature (reference: T
j
= 125° C)
Figure 8. Transient peak forward voltage
versus dI
F
/dt (90% confidence, per
diode)
Figure 9. Forward recovery time versus dI
F
/dt
(90% confidence, per diode)
25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
I
RM
S factor
T (°C)
j
0 50 100 150 200 250 300 350 400 450 500
0
1
2
3
4
5
6
7
8
V (V)
FP
I=I(av)
FF
T =125°C
j
dI /dt(A/µs)
F
0 50 100 150 200 250 300 350 400 450 500
0
100
200
300
400
500
600
700
800
900
1000
t (ns)
fr
V =1.1 x V max.
FR F
I=I(av)
FF
T =125°C
j
dI /dt(A/µs)
F