Datasheet

Characteristics STTH20003TV
2/7
1 Characteristics
When diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.75 x I
F(AV)
+ 0.0020 I
F
2
(RMS)
Table 2. Thermal resistance
Symbol Parameter Value (max). Unit
R
th(j-c)
Junction to case
Per diode 0.55
°C/WTot a l 0 . 3 5
R
th(c)
Coupling 0.1
Table 3. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2%
Reverse leakage
current
T
j
= 25° C
V
R
= 300 V
200 µA
T
j
= 125° C 0.2 2 mA
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2%
Forward voltage drop
T
j
= 25° C
I
F
= 100 A
1.20
V
T
j
= 150° C 0.8 0.95
Table 4. Dynamic characteristics (per diode)
Symbol Parameter Test conditions Min Typ Max Unit
t
rr
Reverse recovery
time
T
j
= 25° C
I
F
= 0.5 A I
rr
= 0.25 A I
R
= 1 A 55
ns
I
F
= 1 A dI
F
/dt = -50 A/µs
V
R
= 30 V
90
I
RM
Reverse recovery
current
T
j
= 125° C
I
F
= 100 A V
R
= 200 V
dI
F
/dt = -200 A/µs
18 A
S
factor
Softness factor T
j
= 125° C
I
F
= 100 A V
R
= 200 V
dI
F
/dt = -200 A/µs
0.3
t
fr
Forward recovery
time
T
j
= 25° C
I
F
= 100 A dI
F
/dt = 200 A/µs
V
FR
= 1.1 x V
Fmax
1400 ns
V
FP
Forward recovery
voltage
T
j
= 25° C
I
F
= 100 A dI
F
/dt = 200 A/µs
V
FR
= 1.1 x V
Fmax
5V