Datasheet

STTH20002TV
4/5
®
Fig. 6: Reserve recovery time versus dI
F
/dt
(typical values, per diode).
Fig. 7: Peak reverse recovery current versus dI
F
/dt
(typical values, per diode).
Fig. 8: Dynamic parameters versus junction
temperature.
0
20
40
60
80
100
120
10 100 1000
t (ns)
rr
dI /dt(A/µs)
F
T =25°C
j
T =125°C
j
I =100A
F
V =160V
R
0
5
10
15
20
25
10 100 1000
I (A)
RM
dI /dt(A/µs)
F
T =25°C
j
T =125°C
j
I =100A
F
V =160V
R
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125 150
Q;I ] /
RR RM j RR RM j
[T Q ; I [T =125°C]
T (°C)
j
I
RM
Q
RR
I =100A
F
V =160V
R