Datasheet

STTH20002TV
2/5
®
THERMAL RESISTANCE
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs,
δ < 2%
To evaluate the conduction losses use the following equation: P = 0.65 x I
F(AV)
+ 0.002 I
F
2
(RMS)
DYNAMIC CHARACTERISTICS (per diode)
Symbol Parameter Maximum Unit
R
th(j-c)
Junction to case Per diode 0.52 °C/W
Total 0.31
R
th(c)
Coupling 0.1 °C/W
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
* Reverse leakage current T
j
= 25°C V
R
= V
RRM
100 µA
T
j
= 125°C 80 800
V
F
** Forward voltage drop T
j
= 25°C I
F
= 100A 1.05 V
I
F
= 200A 1.20
T
j
= 150°C I
F
= 100A 0.75 0.85
I
F
= 200A 1.05
Symbol Parameter Test conditions Min. Typ Max. Unit
t
rr
Reverse recovery
time
T
j
= 25°C I
F
= 1A dI
F
/dt = 200 A/µs
V
R
=30V
41 50 ns
I
RM
Reverse recovery
current
T
j
= 125°C I
F
= 100A V
R
= 160V
dI
F
/dt = 200 A/µs
11.5 15 A
t
fr
Forward recovery
time
T
j
= 25°C I
F
= 100A dI
F
/dt = 200 A/µs
V
FR
= 1.1 x V
Fmax
800 ns
V
FP
Forward recovery
voltage
T
j
= 25°C I
F
= 100A dI
F
/dt = 200 A/µs 2.5 V