Datasheet

Characteristics STTH802
4/11
Figure 5. Relative variation of thermal
impedance, junction to case,
versus pulse duration
(TO-220FPAC)
Figure 6. Junction capacitanceversus
reverse applied voltage (typical
values)
0.0
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z
th(j-c)
/R
th(j-c)
Single pulse
TO-220FPAC
tp(s)
10
100
1 10 100 1000
C(pF)
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
V
R
(V)
Figure 7. Reverse recovery charges versus
dI
F
/dt (typical values)
Figure 8. Reverse recovery time versus dI
F
/dt
(typical values)
0
20
40
60
80
100
120
140
160
10 100 1000
Q
RR
(nC)
I
F
=8A
V
R
=160V
T
j
=125°C
T
j
=25°C
dI
F
/dt(A/µs)
0
10
20
30
40
50
60
70
80
10 100 1000
t
RR
(ns)
I
F
=8A
V
R
=160V
T
j
=125°C
T
j
=25°C
dI
F
/dt(A/µs)
Figure 9. Peak reverse recovery current
versus dI
F
/dt (typical values)
Figure 10. Dynamic parameters versus
junction temperature
0
2
4
6
8
10
12
10 100 1000
I
RM
(A)
I
F
=8A
V
R
=160V
T
j
=125°C
T
j
=25°C
dI
F
/dt(A/µs)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125 150
Q
RR
;I
RM
[T
j
]/Q
RR
;I
RM
[T
j
=125°C]
I
RM
Q
RR
I
F
=8A
V
R
=160V
T
j
(°C)