Datasheet

Characteristics STTH10002
4/8
Figure 5. Junction capacitance versus
reverse applied voltage (typical
values)
Figure 6. Reverse recovery charges versus
dI
F
/dt (typical values)
100
1000
1 10 100 1000
C(pF)
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
V
R
(V)
0
50
100
150
200
250
300
350
400
450
10 100 1000
Q
RR
(nC)
I
F
= 50 A
V
R
=160 V
T
j
=125 °C
T
j
=25 °C
dI
F
/dt(A/µs)
Figure 7. Reverse recovery time versus dI
F
/dt
(typical values)
Figure 8. Peak reverse recovery current
versus dI
F
/dt (typical values)
Figure 9. Dynamic parameters versus
junction temperature
0
10
20
30
40
50
60
70
80
90
100
110
120
10 100 1000
t
RR
(ns)
I
F
= 50 A
V
R
= 160 V
T
j
=125 °C
T
j
=25 °C
dI
F
/dt(A/µs)
0
4
8
12
16
20
10 100 1000
I
RM
(A)
I
F
= 50 A
V
R
=160V
T
j
=125 °C
T
j
=25 °C
dI
F
/dt(A/µs)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125 150
Q
RR
;I
RM
[T
j
]/Q
RR
;I
RM
[T
j
=125°C]
I
RM
Q
RR
I
F
= 50 A
V
R
=160V
T
j
(°C)