Datasheet

STTH10002 Characteristics
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Table 4. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25 °C
53 65 ns
I
F
= 1 A, dI
F
/dt = -200 A/µs,
V
R
= 30 V, T
j
= 25 °C
30 37
I
RM
Reverse recovery current
I
F
= 50 A, dI
F
/dt = 200 A/µs,
V
R
= 160 V, T
j
= 125 °C
10 13 A
t
fr
Forward recovery time
I
F
= 50 A, dI
F
/dt = 200 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25 °C
180 ns
V
FP
Forward recovery voltage
I
F
= 50 A, dI
F
/dt = 200 A/µs,
T
j
= 25 °C
1.6 V
Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus
forward current (typical values, per
diode)
0
100
200
300
400
500
600
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I
M
(A)
T
d
=tp/T
tp
I
M
T
δ
=tp/T
tp
I
M
P = 60 WP = 60 W
P = 30 WP = 30 W
P = 100 WP = 100 W
δ
0
50
100
150
200
250
300
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
FM
(A)
T
j
=25°C
T
j
=150°C
V
FM
(V)
Figure 3. Forward voltage drop versus
forward current (maximum values,
per diode)
Figure 4. Relative variation of thermal
impedance, junction to case,
versus pulse duration
0
50
100
150
200
250
300
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
FM
(A)
T
j
=25°C
T
j
=150°C
V
FM
(V)
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z
th(j-c)
/
R
th(j-c)
Single pulse
ISOTOP
tp(s)