Datasheet

Characteristics STTH10002
2/8
1 Characteristics
When the two diodes 1 and 2 are used simultaneously:
∆Tj(diode 1) = P (diode 1) X R
th(j-c)
(Per diode) + P (diode 2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.63 x I
F(AV)
+ 0.0034 I
F
2
(RMS)
Table 1. Absolute ratings (limiting values at T
j
= 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
F(RMS)
RMS forward current Per diode 150 A
I
F(AV)
Average forward current, δ = 0.5
Per diode T
c
= 100° C
50 A
Per device T
c
= 95° C
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 750 A
T
stg
Storage temperature range -55 to + 175 ° C
T
j
Maximum operating junction temperature 150 ° C
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode 1
° C/WTotal 0.55
R
th(c)
Coupling 0.1
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
50
µA
T
j
= 125° C 50 500
V
F
(2)
Forward voltage drop
T
j
= 25° C
I
F
= 50 A 1
V
I
F
= 100 A 1.15
T
j
= 125° C I
F
= 100 A 0.90 1.0
T
j
= 150° C
I
F
= 50 A 0.72 0.80
I
F
= 100 A
0.86 0.97
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %