Datasheet

STPS8L30 Characteristics
3/7
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4. Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
0
0.2
0.4
0.6
0.8
1
1.2
25 50 75 100 125 150
T (°C)
j
P(t)
P (25°C)
ARM p
ARM
Figure 5. Non repetitive surge peak
forward current versus overload
duration (maximum values)
Figure 6. Relative variation of thermal
impedance junction to ambient
versus pulse duration
1E-3 1E-2 1E-1 1E+0
0
20
40
60
80
100
120
IM
t
δ=0.5
I (A)
M
t(s)
T =25°C
c
T =75°C
c
T =125°C
c
Z/R
th(j-c) th(j-c)
1E-4 1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
T
δ
=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Figure 7. Reverse leakage current versus
reverse voltage applied (typical
values)
Figure 8. Junction capacitance versus
reverse voltage applied (typical
values)
0 5 10 15 20 25 30
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
3E+2
I (mA)
R
V (V)
R
T =125°C
j
T =150°C
j
T =25°C
j
11040
100
200
500
1000
2000
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j