Datasheet

1 Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short-
circuited)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 60 V
I
F(AV)
Average forward current , δ = 0.5 square pulse
T
c
= 135 °C
5 A
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal
220 A
P
ARM
Repetitive peak avalanche power
t
p
= 10 µs, T
j
= 125 °C
280 W
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature
(1)
+150 °C
1. (dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameters
Symbol Parameter Typ. value Unit
R
th(j-c)
Junction to case 1.9 °C/W
For more information, please refer to the following application note:
• AN5088: Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics (anode terminals short-circuited)
Symbol
Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
- 470 µA
T
j
= 125 °C
- 50 150 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 2.5 A
- 0.44
V
T
j
= 125 °C
- 0.30 0.35
T
j
= 25 °C
I
F
= 5 A
- 0.51
T
j
= 125 °C
- 0.40 0.46
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the maximum conduction losses, use the following equation:
P = 0.24 x I
F(AV)
+ 0.044 x I
F
2
(RMS)
For more information, please refer to the following application notes related to the power losses:
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses in a power diode
STPS5L60SF
Characteristics
DS12691 - Rev 1
page 2/9