Datasheet

1.1 Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
P
F(AV)
(W)
I
F(AV)
(A)
360°
α
T
δ= tp/T
tp
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0.0
Figure 2. Average forward current versus ambient
temperature (δ = 0.5)
360°
α
0
2
4
6
8
10
0 25 50 75 100 125 150 175
T
amb
(°C)
I
F(AV)
(A)
T
δ
=tp/T
tp
DPAK
R
th(j-a)
=R
th(j-c)
SMB-Flat & SMC
R
th(j-a)
=R
th(j-l)
Figure 3. Normalized avalanche power derating versus
pulse duration (T
j
= 125 °C)
P (t
p
)
P (10 µs)
ARM
ARM
0.001
0.01
0.1
1
1 10 100 1000
t (µs)
p
Figure 4. Relative variation of thermal impedance junction
to case versus pulse duration (DPAK)
0.0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
0.1
Z
th(j-c)
/R
th(j-c)
1.E+00
360°
α
t
P
(s)
DPAK
Single pulse
Figure 5. Relative variation of thermal impedance junction
to lead versus pulse duration (SMB flat, SMB flat Notch)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
360°
α
Z
th(j-l)
/R
th(j-l)
t
P
(s)
SMB Flat
Single pulse
SMB Flat Notch
Figure 6. Relative variation of thermal impedance junction
to lead versus pulse duration (SMC)
360°
α
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
t
p
(s)
Z
th(j-l)
/R
th(j-l)
Single pulse
SMC
STPS4S200
Characteristics (curves)
DS10646 - Rev 4
page 3/17