Datasheet

1 Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
F(RMS)
Forward rms current 10 A
I
F(AV)
Average forward current, δ = 0.5, square
wave
SMB Flat Notch, SMC, SMB
Flat
T
L
= 125 °C
4 A
DPAK
T
c
= 160°C
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal
130 A
T
stg
Storage temperature range -65 to +175 °C
T
j
Operating junction temperature range
(1)
-40 to +175 °C
1. (dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameter
Symbol Parameter Max. value Unit
R
th(j-l)
Junction to lead (SMB Flat Notch, SMC, SMB Flat) 15
°C/W
R
th(j-c)
Junction to case DPAK 3.2
For more information, please refer to the following application note :
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
- 5 µA
T
j
= 125 °C
- 0.70 2.50 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 4 A
- 0.87
V
T
j
= 125 °C
- 0.64 0.71
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.63 x I
F(AV)
+ 0.020 x I
F
2
(RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
STPS4S200
Characteristics
DS10646 - Rev 4
page 2/17