Datasheet

Characteristics STPS40L15C
2/8 Doc ID 4926 Rev 6
1 Characteristics
To evaluate the conduction losses use the following equation :
P = 0.18 x I
F(AV)
+ 0.008 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 15 V
I
F(RMS)
Forward current rms 30 A
I
F(AV)
Average forward current
T
case
= 140 °C
δ = 1
Tot a l 4 0
A
Per diode 20
I
FSM
Surge non repetitive forward
current
t
p
= 10 m, Sinusoidal 310 A
I
RRM
Peak repetitive reverse current t
p
= 2 µs, F= 1 kHz 2 A
I
RSM
Non repetitive peak reverse current t
p
= 100 µs 3 A
P
ARM
Repetitive peak avalanche power t
p
= 1µs, T
j
= 25 °C 13140 W
T
stg
Storage temperature range -65 to + 150 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
125 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Table 3. Thermal resistances
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode 1.6
°C/W
Total 0.85
R
th (c)
Coupling 0.1 °C/W
Table 4. Static electrical characteristics (Per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test : t
p
= 380 µs, δ < 2%
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
6
mA
T
j
= 100 °C 200 500
V
F
(1)
Forward voltage drop
T
j
= 25 °C I
F
= 19 A 0.41
V
T
j
= 25 °C I
F
= 40 A 0.52
T
j
= 125 °C I
F
= 19 A 0.28 0.33
T
j
= 125 °C I
F
= 40 A 0.42 0.50
dPtot
dTj
---------------
1
Rth j a–()
--------------------------
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