Datasheet

STPS40H100CW
2/4
Symbol Parameter Value Unit
R
th (j-c)
Junction to case Per diode
Total
0.9
0.55
°C/W
R
th (c)
Coupling 0.1
THERMAL RESISTANCES
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
* Reverse leakage current Tj = 25°CV
R
=V
RRM
10 µA
Tj = 125°C 5 15 mA
V
F
** Forward voltage drop Tj = 25°CI
F
= 20 A 0.73 V
Tj = 125°CI
F
= 20 A 0.58 0.61
Tj=25°CI
F
= 40 A 0.85
Tj = 125°CI
F
= 40 A 0.67 0.72
STATIC ELECTRICAL CHARACTERISTICS
Pulse test : * tp=5ms,δ<2%
** tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.5xI
F(AV)
+ 0.0055 x I
F
2
(RMS)
0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0
0
2
4
6
8
10
12
14
16
IF(av) (A)
PF(av)(W)
T
δ
=tp/T
tp
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0 25 50 75 100 125 150 175
0
2
4
6
8
10
12
14
16
18
20
22
Tamb(°C)
IF(av)(A)
Rth(j-a)=15°C/W
Rth(j-a)=Rth(j-c)
T
δ
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0
0.2
0.4
0.6
0.8
1
1.2
0 25 50 75 100 125 150
T (°C)
j
P(t)
P (25°C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.