Datasheet

Figure 7. Relative variation of thermal impedance junction
to ambient versus pulse duration (SMB)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Single pulse
Z /R
th(j-a) th(j-a)
t (s)
p
Figure 8. Relative variation of thermal impedance junction
to ambient versus pulse duration (DO-201AD)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Single pulse
Z /R
th(j-a) th(j-a)
t (s)
p
Figure 9. Relative variation of thermal impedance junction
to ambient versus pulse duration (DO-15)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Single pulse
Z /R
th(j-a) th(j-a)
t (s)
p
Figure 10. Reverse leakage current versus reverse
voltage applied (typical values)
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 5 10 15 20 25 30 35 40 45 50 55 60
Tj=125°C
Tj=25°C
Tj=100°C
V (V)
R
I (mA)
R
Figure 11. Junction capacitance versus reverse voltage
applied (typical values)
10
100
1000
1 1 0 100
F=1MHz
Vosc=30mV
Tj=25°C
V (V)
R
C(pF)
Figure 12. Forward voltage drop versus forward current
(high level)
0
5
10
15
20
25
30
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Tj=25°C
(Maximum values)
Tj=100°C
(Maximum values)
Tj=100°C
(Maximum values)
Tj=100°C
(Typical v alues)
Tj=100°C
(Typical v alues)
I (A)
FM
V (V)
FM
STPS3L60
Characteristics (curves)
DS2134 - Rev 7
page 5/17