Datasheet

Figure 5. Relative variation of thermal impedance junction
to lead versus pulse duration (SMB Flat)
Z / R
th(j-l) th(j-l)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Single pulse
SMB flat
t (s)
p
Figure 6. Reverse leakage current versus reverse voltage
applied (typical values)
I (µA)
R
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
0 20 40 6 0 80 100
T
j
=150 °C
T
j
=125 °C
T
j
=25 °C
T
j
=100 °C
T
j
=75 °C
T
j
=50 °C
V
R
(V)
Figure 7. Junction capacitance versus reverse voltage
applied (typical values)
C(pF)
10
100
1 1 0 100
F = 1 MHz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
V
R
(V)
Figure 8. Forward voltage drop versus forward current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
T
j
=25 °C
(Maximum values)
T
j
=125 °C
(Maximum values)
T
j
=125 °C
(Maximum values)
T
j
=125 °C
(Typical values)
T
j
=125 °C
(Typical values)
I
F
(A)
V
F
(V)
Figure 9. Thermal resistance junction to ambient versus
copper surface under each lead (SMB)
0
50
100
150
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R (°C/W)
th(j-a)
SMB
S
(Cu)
(cm²)
Epoxy p rinted ci rcuit board FR4, copper t hickness: 35 µm
Figure 10. Thermal resistance junction to ambient versus
copper surface under each lead (SMB flat)
0
50
100
150
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Rth(j-a)(°C/W)
SMB flat
S
Cu
(cm²)
Epoxy printed board FR4, copper thickness: 35 μm
STPS3H100
Characteristics (curves)
DS6597 - Rev 3
page 4/11