Datasheet

1 Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(AV)
Average forward current, δ = 0.5 square wave
SMB
T
l
= 115 °C
3 A
SMB Flat
T
l
= 140 °C
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal
75 A
P
ARM
Repetitive peak avalanche power
t
p
= 10 µs,
T
j
= 125 °C
172 W
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature
(1)
175 °C
1. (dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameter
Symbol Parameter Max. value Unit
R
th(j-l)
Junction to lead
SMB 25
°C/W
SMB Flat 15
For more information, please refer to the following application note:
• AN5088: Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
- 1.00 µA
T
j
= 125 °C
- 0.40 1.00 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 3 A
- 0.84
V
T
j
= 125 °C
- 0.63 0.68
T
j
= 25 °C
I
F
= 6 A
- 0.92
T
j
= 125 °C
- 0.71 0.76
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.6 x I
F(AV)
+ 0.027 x I
F
2
(RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
STPS3H100
Characteristics
DS6597 - Rev 3
page 2/11