Datasheet

Characteristics STPS3150
4/10 Doc ID 9474 Rev 5
Figure 7. Normalized avalanche power
derating versus pulse duration
Figure 8. Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.10.01 1
0.1
10 100
1000
1
P(t
p
)
P (1µs)
ARM
ARM
t (µs)
p
0
0.2
0.4
0.6
0.8
1
1.2
25 50 75 100 125
150
P(T)
P (25 °C)
ARM j
ARM
T (°C)
j
Figure 9. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 10. Relative variation of thermal
impedance junction to ambient
versus pulse duration
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z/R
th(j-a) th(j-a)
T
δ
=tp/T
tp
t (s)
p
SMB
Single pulse
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z/R
th(j-a) th(j-a)
T
δ
=tp/T
tp
t (s)
p
DO-201AD
Single pulse
Figure 11. Relative variation of thermal
impedance junction to lead
versus pulse duration
Figure 12. Reverse leakage current versus
reverse voltage applied
(typical values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z/R
th(j-l) th(j-l)
SMB flat
t (s)
p
Single pulse
I (µA)
R
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
0 25 50 75 100 125 150
V (V)
R
T =125°C
j
T =150°C
j
T =100°C
j
T =50°C
j
T =25°C
j
T =75°C
j