Datasheet

Characteristics
STPS3045C
4/13
DocID3510 Rev 9
1.2 Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current (per diode)
Figure 2: Average forward current versus ambient
temperature (δ = 0.5, per diode)
Figure 3: Normalized avalanche power derating
versus pulse duration (Tj = 125 °C)
Figure 4: Relative variation of thermal impedance
junction to case versus pulse duration
Figure 5: Junction capacitance versus reverse
voltage applied (typical values, per diode)
Figure 6: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
P (W)
F(AV)
0
1
2
3
4
5
6
7
8
9
10
11
12
0 2 4 6 8 10 12 14 16 18 20
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
T
δ = tp/T
tp
I
F(AV)
(A)
I (A)
F(AV)
0
2
4
6
8
10
12
14
16
18
0 2 5 50 75 100 125 150 175
T
amb
(°C)
T
δ
=tp/T
tp
R = 15°C/W
th(j-a)
R =
th(j-a)
R
th(j-c)
P (t
p
)
P (10 µs)
ARM
ARM
0.001
0.01
0.1
1
1 10 100 1000
t (µs)
p
Z /R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
T
δ
= tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
C (
nF
)
100
1000
10000
1 10 100
V
R
(V)
F= 1 M H z
V
OSC
= 30 mV
RMS
T = 25 °C
j
1.E -01
1.E +00
1.E +01
1.E +02
1.E +03
1.E +04
1.E +05
0 5 10 15 20 25 30 35 40 45
I (µA)
R
T = 150°C
j
T = 125°C
j
T = 100°C
j
T = 75°C
j
T = 50°C
j
T = 25°C
j
V (
V
)
R
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