Datasheet

Characteristics
STPS3045C
2/13
DocID3510 Rev 9
1 Characteristics
Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
45
V
I
F(RMS)
Forward rms current
30
A
I
F(AV)
Average forward current
δ = 0.5, square wave
T
C
= 155 °C
Per diode
15
A
Per device
30
I
FSM
Surge non repetitive forward current
t
p
= 10 ms
sinusoidal
220
A
P
ARM
(1)
Repetitive peak avalanche power
t
p
= 10 µs,
T
j
= 125 °C
430
W
T
stg
Storage temperature range
-65 to +175
°C
T
j
Maximum operating junction temperature
(2)
175
Maximum operating junction temperature (DC forward current
without reverse bias, t = 1 hour for D²PAK
200
Notes:
(1)
For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy
measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes
AN1768, “Admissible avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky
rectifier avalanche specification”.
(2)
(dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
TO-220AB / D²PAK
Per diode
1.60
°C/W
Total
0.95
TO-247
Per diode
1.5
Total
0.9
R
th(c)
Coupling
TO-220AB / D²PAK/ TO-247
0.3
When the diodes 1 and 2 are used simultaneously:
ΔT
j (diode1)
= P
(diode1)
x R
th(j-c)
(per diode) + P
(diode2)
x R
th(c)
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