Datasheet

STPS3045CT/CG/CR/CP/CPI/CW/CFP
2/9
Symbol Parameter Value Unit
R
th(j-c)
Junction to case TO-220AB / D
2
PAK/I
2
PAK Per diode
Total
1.60
0.85
°C/W
SOT-93 / TO-247 Per diode
Total
1.5
0.8
TO-220FPAB Per diode
Total
4
3.2
TOP-3I Per diode
Total
2.2
1.6
R
th(c)
TO-220AB / D
2
PAK/I
2
PAK
SOT-93 / TO-247
Coupling 0.10
TO-220FPAB Coupling 2.5
TOP-3I Coupling 1.0
When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode 1) = P (diode1) x R
th(j-c)
(per diode) + P (diode 2) x R
th(c)
THERMAL RESISTANCES
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 45 V
I
F(RMS)
RMS forward current 30 A
I
F(AV)
Average forward
current
δ = 0.5
TO-220AB / D
2
PAK /
I
2
PAK / SOT-93 / TO-247
Tc = 155°C Per diode
Per de-
vice
15
30
A
TO-220FPAB Tc = 130°C
TOP-3I Tc = 150°C
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 220 A
I
RRM
Repetitive peak reverse current t
p
= 2 µs square
F = 1kHz
1A
I
RSM
Non repetitive peak reverse current tp = 100 µs square 3 A
P
ARM
Repetitive peak avalanche power tp = 1µs Tj = 25°C 6000 W
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature * 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
ABSOLUTE RATINGS (limiting values, per diode)
*:
dPtot
dTj Rth j a
<
−
1
()
thermal runaway condition for a diode on its own heatsink
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
* Reverse leakage current Tj = 25°C V
R
=V
RRM
200 µA
Tj = 125°C 11 40 mA
V
F
* Forward voltage drop Tj = 125°CI
F
= 15 A 0.5 0.57 V
Tj=25°CI
F
= 30 A 0.84
Tj = 125°C I
F
= 30 A 0.65 0.72
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.42xI
F(AV)
+ 0.01 I
F
2
(RMS)