Datasheet

1 Characteristics
Table 1. Absolute ratings (limiting values, at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 60 V
I
F(RMS)
Forward rms current 10 A
I
F(AV)
Average forward current δ
= 0.5, square wave
SMB Flat
T
L
= 130 °C
2 A
SMA
T
L
= 115 °C
SMA Flat Notch
T
L
= 120 °C
DO-41
T
L
= 110 °C
I
FSM
Surge non repetitive
forward current
SMB Flat, SMA,
DO-41
t
p
= 10 ms sinusoidal
75
A
SMA Flat Notch 105
P
ARM
Repetitive peak avalanche
power
t
p
= 10 µs, T
j
= 125 °C
115 W
T
stg
Storage temperature range -65 to + 150 °C
T
j
Maximum operating junction temperature
(1)
+ 150 °C
1. (dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameter
Symbol
Parameter Max. value Unit
R
th(j-l)
Junction to lead
SMB Flat 15
°C/W
SMA 25
SMA Flat Notch 20
Junction to lead Lead length = 10 mm DO-41 30
For more information, please refer to the following application note :
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
- 100 µA
T
j
= 100 °C
- 2 10 mA
V
F
(1)
Forward voltage
drop
T
j
= 25 °C
I
F
= 2 A
- 0.60
V
T
j
= 125 °C
- 0.51 0.55
T
j
= 25 °C
I
F
= 4 A
- 0.77
T
j
= 125 °C
- 0.62 0.67
1. Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.43 x I
F(AV)
+ 0.06 I
F
2
(RMS)
STPS2L60
Characteristics
DS2976 - Rev 8
page 2/15