Datasheet

Characteristics STPS2L40
2/10
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.22 x I
F(AV)
+ 0.06 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 40 V
I
F(AV)
Average forward current
SMB T
L
= 130 °C δ = 0.5
2ASMBflat T
L
= 140 °C δ = 0.5
SMAflat T
L
= 130 °C δ = 0.5
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 75 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 2200 W
T
stg
Storage temperature range -65 to + 150 °C
T
j
Operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
150 °C
Table 3. Thermal resistances
Symbol Parameter Value Unit
R
th (j-l)
Junction to lead
SMB 20
°C/W SMBflat 10
SMAflat 20
Table 4. Static electrical characteristics
Symbol Tests conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 380 µs, δ < 2
Reverse leakage current
T
j
= 25 °C
V
R
= 40 V
220 µA
T
j
= 100 °C 20 mA
T
j
= 125 °C 38 80 mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 1 A
0.39
V
T
j
= 125 °C 0.25 0.28
T
j
= 25 °C
I
F
= 2 A
0.43
T
j
= 125 °C 0.31 0.34
T
j
= 25 °C
I
F
= 4 A
0.5
V
T
j
= 125 °C 0.39 0.45
d
Ptot
dTj
-
--------------
1
Rth j a–()
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