Datasheet

1 Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 25 V
I
F(RMS)
Forward rms current 10 A
I
F(AV)
Average forward current, δ = 0.5 square wave
SMB
T
L
= 125 °C
2 A
SMA Flat Notch
T
L
= 130 °C
I
FSM
Surge non repetitive forward current
SMB
t
p
= 10 ms sinusoidal
75
A
SMA Flat Notch 90
P
ARM
Repetitive peak avalanche power
t
p
= 10 µs, T
j
= 125 °C
108 W
T
stg
Storage temperature range -65 to +150 °C
T
j
Maximum operating junction temperature
(1)
+150 °C
1. (dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameter
Symbol
Parameter Max. value Unit
R
th(j-l)
Junction to lead
SMB 25
°C/W
SMA Flat Notch 20
For more information, please refer to the following application note :
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
- 90 µA
T
j
= 125 °C
- 15 30 mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 2 A
- 0.450
V
T
j
= 125 °C
- 0.325 0.375
T
j
= 25 °C
I
F
= 4 A
- 0.530
T
j
= 125 °C
- 0.430 0.510
1. Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.24 x I
F(AV)
+ 0.068 x I
F
2
(RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
STPS2L25
Characteristics
DS1245 - Rev 7
page 2/12
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