Datasheet

Characteristics STPS2H100
2/10 Doc ID 6115 Rev 7
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(AV)
Average forward current
SMA / SMB T
L
= 130 °C δ = 0.5
2A
SMB flat T
L
= 150 °C δ = 0.5
I
FSM
Surge non repetitive forward current t
p
=10 ms sinusoidal 75 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 2400 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Operating junction temperature
(1)
175 °C
1. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
<
1
Rth(j-a)
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead
SMA 30 °C/W
SMB 25
SMB flat 15
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
1µA
T
j
= 125 °C 0.4 1 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 2 A
0.79
V
T
j
= 125 °C 0.6 0.65
T
j
= 25 °C
I
F
= 4 A
0.88
T
j
= 125 °C 0.69 0.74
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.56 x I
F(AV)
+ 0.045 I
F
2
(RMS)