Datasheet

Figure 5. Relative variation of thermal impedance junction
to ambient versus pulse duration (SMA)
Z /R
th(j-a) th(j-a)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Single pulse
SMA
t (s)
p
Figure 6. Reverse leakage current versus reverse voltage
applied (typical values)
I (µA)
R
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
0 25 5 0 7 5 100 125 150
T =125°C
j
T =150°C
j
T =100°C
j
T =50°C
j
T =25°C
j
T =75°C
j
V (V)
R
Figure 7. Junction capacitance versus reverse voltage
applied (typical values)
C(pF)
10
100
1000
1 1 0 100 1000
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
Figure 8. Forward voltage drop versus forward current
(low level)
I (A)
F
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
j
=25°C
(Maximum values)
T
j
=125°C
(Maximum values)
T
j
=125°C
(Maximum values)
T
j
=125°C
(Typical v alues)
T
j
=125°C
(Typical v alues)
V (V)
F
Figure 9. Forward voltage drop versus forward current
(high level)
I (A)
F
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V (V)
F
T =25°C
(maximum values)
j
T =125°C
(maximum values)
j
T =125°C
(typical values)
j
Figure 10. Thermal resistance junction to ambient versus
copper surface under each lead (SMA)
0
50
100
150
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R
th(j-a)
(°C/W)
(cm²)
Cu
S
SMA
STPS2150
Characteristics (curves)
DS3282 - Rev 8
page 4/13