Datasheet

1 Characteristics
Table 1. Absolute ratings (limiting values, at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 150 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current δ =
0.5, square wave
SMA
T
L
= 145 °C
2 A
SMA Flat Notch
T
L
= 145 °C
DO-15
T
L
= 130 °C
I
FSM
Surge non repetitive forward
current
SMA
t
p
= 10 ms sinusoidal
75
ASMA Flat Notch 70
DO-15 150
P
ARM
Repetitive peak avalanche
power
t
p
= 10 µs, T
j
= 125 °C
170 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
+ 175 °C
1. (dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameter
Symbol
Parameter Value Unit
R
th(j-L)
Junction to lead
SMA 20
°C/WSMA Flat Notch 20
Junction to lead Lead length = 10 mm DO-15 30
For more information, please refer to the following application note :
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
- 0.5 1.5 µA
T
j
= 125 °C
- 0.5 1.5 mA
V
F
(2)
Forward voltage
drop
T
j
= 25 °C
I
F
= 2 A
- 0.78 0.82
V
T
j
= 125 °C
- 0.62 0.67
T
j
= 25 °C
I
F
= 4 A
- 0.86 0.89
T
j
= 125 °C
- 0.70 0.75
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.59 x I
F(AV)
+ 0.04 I
F
2
(RMS)
STPS2150
Characteristics
DS3282 - Rev 8
page 2/13