Datasheet

STPS20H100CT/CF/CG/CG-1
4/8
1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
T
δ
=tp/T
tp
Fig. 7-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(TO-220AB, D
2
PAK, I
2
PAK).
0 102030405060708090100
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
IR(µA)
VR(V)
Tj=125°C
Tj=100°C
Tj=25°C
Tj=150°C
Fig. 8: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1 2 5 10 20 50 100
100
200
500
1000
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 9: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1E-2 1E-1 1E+0 1E+1
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-c)/Rth(j-c)
tp(s)
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
Fig. 7-2: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(ISOWATT220AB, TO-220FPAB).
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1.0
10.0
100.0
IFM(A)
Tj=125°C
Typical values
Tj=125°C
Tj=25°C
Tj=150°C
Typical values
VFM(V)
Fig. 10: Forward voltage drop versus forward
current (maximum values, per diode).
0 5 10 15 20 25 30 35 40
0
10
20
30
40
50
60
70
80
S(Cu) (cm²)
Rth(j-a) (°C/W)
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35µm) (D
2
PAK).