Datasheet

STPS20170C
4/8
Figure 7: Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 8: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 9: Junction capacitance versus reverse
voltage applied (typical values, per diode)
Figure 10: Forward voltage drop versus
forward current (per diode)
Figure 11: Thermal resistance junction to am-
bient versus copper surface under tab (epoxy
printed board FR4, Cu = 35µm) (D
2
PAK)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
Z/R
th(j-c) th(j-c)
T
δ
=tp/T
tp
Single pulse
(TO-220FPAB)
(TO-220AB, I PAK and D PAK)
22
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
0 25 50 75 100 125 150 175
I (µA)
R
V (V)
R
T =175°C
j
T =150°C
j
T =125°C
j
T =100°C
j
T =25°C
j
10
100
1000
1 10 100 1000
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
I (A)
FM
0.1
1.0
10.0
100.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
T =125°C
(typical values)
j
T =125°C
(maximum values)
j
T =25°C
(maximum values)
j
V (V)
FM
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30 35 40
S(cm²)
R (°C/W)
th(j-a)