Datasheet

1 Characteristics
Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 120 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current , δ = 0.5 square wave
T
c
= 130 °C
20 A
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal
200 A
P
ARM
Repetitive peak avalanche power
t
p
= 10 µs, T
j
= 125 °C
619 W
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature
(1)
175 °C
1. (dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case 2.2 °C/W
Table 3. Static electrical characteristics
Symbol
Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
- 20 µA
T
j
= 125 °C
- 3 10 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 5 A
- 0.70
V
T
j
= 125 °C
- 0.54 0.58
T
j
= 25 °C
I
F
= 10 A
- 0.80
T
j
= 125 °C
- 0.62 0.66
T
j
= 25 °C
I
F
= 20 A
- 0.93
T
j
= 125 °C
- 0.72 0.76
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.56 x I
F(AV)
+ 0.010 x I
F
2
(RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
STPS20120D
Characteristics
DS4232 - Rev 2
page 2/9