Datasheet

Characteristics STPS1L60
2/10 Doc ID 7504 Rev 8
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.44 x I
F(AV)
+ 0.12 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 60 V
I
F(RMS)
Forward rms current
STmite flat 2 A
SMA, DO-41 10 A
I
F(AV)
Average forward current
SMA T
L
= 130 °C δ = 0.5
1ADO-41 T
L
= 120 °C δ = 0.5
STmite flat T
C
= 135 °C δ = 0.5
I
FSM
Surge non repetitive forward current t
p
=10 ms sinusoidal 40 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 1200 W
T
stg
Storage temperature range - 65 to + 150 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-a)
Junction to ambient
SMA 120
°C/W
Lead length = 10 mm DO-41 100
R
th(j-l)
Junction to lead
SMA 30
°C/W
Lead length = 10 mm DO-41 45
R
th(j-c)
Junction to case STmite flat 20 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 380 µs, δ < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
50 µA
T
j
= 100 °C 1.5 5 mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 1 A
0.57
V
T
j
= 100 °C 0.56
T
j
= 125 °C 0.5 0.54
T
j
= 25 °C
I
F
= 2 A
0.75
T
j
= 100 °C 0.68
T
j
= 125 °C 0.6 0.66
dPtot
dTj
<
1
Rth(j-a)