Datasheet

Characteristics STPS1L40
2/11 Doc ID 5507 Rev 6
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.23 x I
F(AV)
+ 0.19 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 40 V
I
F(RMS)
Forward rms current
SMA / SMB 8
A
STmite flat 2
I
F(AV)
Average forward current
SMA / SMB T
L
= 130 °C δ = 0.5
1A
STmite flat T
C
= 135 °C δ = 0.5
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 60 A
I
RRM
Repetitive peak reverse current t
p
= 2 µs F = 1 kHz square 1 A
I
RSM
Non repetitive peak reverse current t
p
= 100 µs square 1 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 900 W
T
stg
Storage temperature range - 65 to + 150 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead
SMA 30
°C/W
SMB 25
R
th(j-c)
Junction to case
STmite flat 20
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 380 µs, δ < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
- - 35 µA
T
j
= 125 °C - 6 10 mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 1 A
--0.5
V
T
j
= 125 °C - 0.37 0.42
T
j
= 25 °C
I
F
= 2 A
- - 0.63
T
j
= 125 °C - 0.5 0.61
dPtot
dTj
<
1
Rth(j-a)