Datasheet

Figure 5. Relative variation of thermal impedance junction
to ambient versus pulse duration (SMA)
Z / R
th(j-a) th(j-a)
0.01
0.10
1.00
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Single pulse
SMA
t (s)
p
Figure 6. Reverse leakage current versus reverse voltage
applied (typical values)
I (mA)
R
1.E-3
1.E-2
1.E-1
1.E+0
1.E+1
1.E+2
0
20
25 30
V (V)
R
T =150°C
j
T =25°C
j
T =100°C
j
T =125°C
j
5 10 15
Figure 7. Junction capacitance versus reverse voltage
applied (typical values)
C(pF)
10
100
500
1 2 10 50
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
5
20
Figure 8. Forward voltage drop versus forward current
(typical values, high level)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0.10
1.00
10.00
I (A)
F
V (V)
F
T =25°C
j
T =150°C
j
T =100°C
j
Figure 9. Forward voltage drop versus forward current
(maximum values, low level)
0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I (A)
F
V (V)
F
T =25°C
j
T
j
=150°C
T =125°C
j
T =100°C
j
Figure 10. Thermal resistance junction to ambient versus
copper surface under each lead (SMB)
0
50
100
150
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R (°C/W)
th(j-a)
SMB
S
(Cu)
(cm²)
Epoxy p ri nted ci rcui t board FR4, coppe r t hickness: 35 µm
STPS1L30
Characteristics (curves)
DS1243 - Rev 8
page 4/15