Datasheet

1 Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 30 V
I
F(RMS)
Forward rms current 10 A
I
F(AV)
Average forward current, δ = 0.5, square wave
SMA
T
L
= 135 °C
1 A
SMA Flat Notch
T
L
= 140 °C
SMB
T
L
= 140 °C
I
FSM
Surge non repetitive forward current
SMA
t
p
= 10 ms sinusoidal
75
ASMA Flat Notch 90
SMB 75
P
ARM
Repetitive peak avalanche power
t
p
= 10 µs, T
j
= 125 °C
110 W
T
stg
Storage temperature range -65 to +150 °C
T
j
Maximum operating junction temperature
(1)
+150 °C
1. (dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameter
Symbol
Parameter Max. value Unit
R
th(j-l)
Junction to lead
SMA 30
°C/WSMA Flat Notch 20
SMB 25
For more information, please refer to the following application note :
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
- 200 µA
T
j
= 100 °C
- 6 15 mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 1 A
- 0.395
V
T
j
= 125 °C
- 0.260 0.300
T
j
= 25 °C
I
F
= 2 A
- 0.445
T
j
= 125 °C
- 0.325 0.375
1. Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.225x I
F(AV)
+ 0.075 x I
F
2
(RMS)
STPS1L30
Characteristics
DS1243 - Rev 8
page 2/15