Datasheet

1 Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage, T
j
= -40 °C to +175 °C 100 V
I
F(RMS)
Forward rms current 10 A
I
F(AV)
Average forward current, δ = 0.5
SMA
T
L
= 150 °C
1 A
SMB
T
L
= 155 °C
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal 50
A
P
ARM
Repetitive peak avalanche power t
p
= 10 µs, T
j
= 125 °C 108 W
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature
(1)
+175 °C
1. (dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal parameters
Symbol Parameter Max. value Unit
R
th(j-l)
Junction to lead
SMA 30
°C/W
SMB 25
Table 3. Static electrical characteristics
Symbol
Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
- 4 µA
T
j
= 125 °C - 0.2 0.5 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 1 A
- 0.77
V
T
j
= 125 °C - 0.58 0.62
T
j
= 25 °C
I
F
= 2 A
- 0.86
T
j
= 125 °C - 0.65 0.70
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.54 x I
F(AV)
+ 0.08 x I
F
2
(RMS)
STPS1H100-Y
Characteristics
DS6946 - Rev 2
page 2/11